| PART |
Description |
Maker |
| SM8LZ47 |
BI - DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| USF5J48 SF5G48 SF5J48 USF5G48 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| USF10J48 SF10G48 SF10J48 USF10G48 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SM6JZ47A SM6GZ47 SM6GZ47A SM6JZ47 |
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| SH8G41 |
HIGH .SPEED THYRISTOR SILICON PLANAR TYPE FOR AUTOMATIC .STROBE FLASHER APPLICATIONS ...DISCHARGER (Chopper)
TOSHIBA HIGH-SPEED THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1903 RN1906 RN1901 RN1902 RN1904 RN1905 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
LED 5X5MM SQR RED DIFF PANEL MT 东芝npn型晶体管硅外延型（厘进程
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| RN4987FE |
TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type
|
Toshiba Semiconductor
|
| VSKT430 VSKT43020PBF |
Thyristor/Diode and Thyristor/Thyristor, 430 A (SUPER MAGN-A-PAKTM Power Modules)
|
Vishay Siliconix
|
| VSKTF20012HJP VSKTF200 VSKTF20012HKP |
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A
|
Vishay Siliconix
|
| VSKT136 VSKT136-04PBF VSKT136-08PBF VSKT13610 VSKT |
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules)
|
Vishay Siliconix
|
